iBasso AMP17

– First ever application of Gallium Nitride (GaN) in the design for portable headphone amplifiers
– When employed in audio amplifiers, the result is enhanced transient response, dynamic range and absolute control precision
– GaNFET features exceptionally low internal resistance, allowing for higher drive currents and maintaining detail, clear rhythm in a stable and impactful manner
– Supporting higher operating frequencies means a reduction in interference caused by inductor ripple currents, resulting in crisp, analog imaging that is more naturally articulated
– With switch speeds surpassing conventional MOSFETS by several tens of times, distortion is further reduced to bring out every delicate nuance for an immersive listening experience

// SPECIFICATIONS
– THD+N: -116dB (no load), -110dB (600 Ohms load)
– Dynamic Range: 120dB
– SNR: 122dB
– Crosstalk: -117dB
– Output Impedance: 1.1 Ohms
– Output Power: 1030mW @ 32 ohms (battery powered), 1900mW @ 32 Ohms (12V DC Power Supply)
– Output Level (Line-Out): 1.6Vrms (Low Gain), 2.6Vrms (Mid Gain), 3Vrms (High Gain)